HORIZONTAL INSULATION GATE BIPOLAR TRANSISTOR

摘要

PURPOSE: A horizontal insulation gate bipolar transistor is provided to suppress a production of a latch-up appearance by increasing a bypass of a hole current and increasing a resistance between an emitter electrode and an n-type emitter layer. CONSTITUTION: The horizontal isolation gate bipolar transistor is formed using a semiconductor active layer in which a drift layer of a first conductive type is formed on an insulation layer. In a surface region of the drift layer is selectively formed a base layer(140) of a second conductive type. An emitter layer(150) of the first conductive type is formed at a surface region of the base layer. The emitter layer comprises a first emitter region(150a) formed with a tripe type, a second emitter region(150b) of a stripe type formed spaced apart in parallel with the first emitter region, and a third region(150c) connecting the first and second emitter regions. A collector layer of the second conductive type is selectively formed at a surface region of the drift layer, and is formed spaced apart in parallel with the base layer. The gate electrode is formed on a surface region between the base layer and the drift layer so as to be insulated. The emitter electrode(190) is formed so as to be electrically connected with the first emitter region of the emitter layer and with the base layer, and the collector electrode(200) is formed so as to be connected with the collector layer.