| 摘要 |
PURPOSE: A fabrication method of semiconductor device is provided to improve a tolerance capability of an electrostatic discharge by selectively forming a silicide layer on a transistor for preventing the electrostatic discharge(ESD). CONSTITUTION: The method comprises the steps of forming a gate (25), a source (27) and a drain (29) of an MOS transistor and a gate (33) of an ESD protection transistor; forming a conductive layer (36) on the resultant structure; forming a PR pattern (38) on the conductive layer (36) to expose the ESD protection transistor; exposing both sides of the gate (33) of the ESD protection transistor by etching the conductive layer using the R pattern (38) as a mask; forming a source and drain (37, 39) of the ESD protection transistor by plug ion implanting; removing the PR pattern (38); and performing a silicidation process, so that a silicide layer (40) is not formed on the gate (33), the source (37) and the drain (39) of the ESD protection transistor, and is formed on the gate (25), the source (27) and the drain (29) of the MOS transistor.
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