SEMICONDUCTOR DEVICE HAVING ELECTROSTATIC DISCHARGE PROTECTION ELEMENT

摘要

PURPOSE: A semiconductor device having electrostatic discharge protection element is provided to reduce current crowding and improve electrostatic discharge characteristic. CONSTITUTION: The device comprises a transistor disposed on both sides of a substrate prearranged electrostatic discharge protection region and having a plurality of gate electrodes. A drain is formed an inside of the gate electrode. A source is formed an outside of the gate electrode. The transistor is used as NMOS transistor and PMOS transistor to pull-up/down of data.