发明名称 |
POWER ON RESET CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A power on reset circuit of semiconductor memory device is provided to prevent generation of static current. CONSTITUTION: A power on reset circuit of semiconductor memory device comprises a pulse generating part(111), a charge discharging part(113) and a static current removing part(115). The pulse generating part(111) senses source voltage and generates a pulse at the beginning of appliance of the source voltage. The charge discharging part(113) discharges every charge remained at the pulse generating part(111) when the source voltage is off. The static current removing part(115) removes the static current generated at the pulse generating part(111).
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申请公布号 |
KR20000015676(A) |
申请公布日期 |
2000.03.15 |
申请号 |
KR19980035713 |
申请日期 |
1998.08.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, DONG YOON |
分类号 |
H03K17/22;(IPC1-7):H03K17/22 |
主分类号 |
H03K17/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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