| 摘要 |
<p>In a semiconductor device having alignment marks formed on a semiconductor substrate, the alignment marks include a main convex or concave alignment mark formed on said semiconductor substrate; and a plurality of minute alignment marks formed on the periphery of the main alignment mark. In areas where the minute alignment marks are formed, even when a film of aluminum or its alloy is stacked on the semiconductor substrate by high temperature sputtering, grains will not grow so as to have a large diameter. Thus, the grains created on the periphery of the main alignment mark are not erroneously recognized as the main alignment mark, thereby realizing accurate alignment.</p> |
