Semiconductor memory device that can have power consumption reduced during self refresh mode

摘要

In a self refresh mode, a precharge potential generation circuit provides a potential of a level that is lower than +E,fra 1/2+EE the internal power supply potential level. An internal drive circuit provides the level of the internal power supply potential in a self refresh mode as the level of the signal to specify selective coupling between a sense amplifier and a bit line pair that takes a shared sense amplifier structure. The self refresh cycle time can be increased to lower the charging current of the bit line.