| 摘要 |
PROBLEM TO BE SOLVED: To lower a read drive voltage of a CCD solid-state image sensing element reduce smear and improve sensitivity, in a CCD solid-state image pickup device. SOLUTION: An N-type diffusion layer (CCD transfer channel) 4 is selectively formed on the surface of an N-type semiconductor substrate 1. A control part 33 of a P-type diffusion layer which controls a signal read voltage and an isolation part 32 of the P-type diffusion layer which is used for layer isolation are formed on the side parts of the N-type diffusion layer 4. The control part 33 and the isolation part 32 are formed to be shallower than the N-type diffusion layer 4 and have impurity concentration higher than a P-type well 2 of the substrate 1. P-type diffusion layers 31, 34 of high concentration are selectively formed on the surface of the substrate 1. These diffusion layers 31, 34 of high concentration connect a part between the N-type diffusion layer 4 and the control part 33, and a part between the N-type diffusion layer 4 and the isolation part 32, respectively, and are formed to have impurity concentration higher than the control part 33, the isolation part 32 and a dark current preventing layer 35 of the P-type diffusion layer.
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