发明名称 MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To enable irregularities of the roughemed surface of a film to be checked with good reproducibility at high speed by a method, wherein the surface area increase rate of the roughened surface of the film is obtained through the reflectivity of a measurement sample which is irradiated with light. SOLUTION: Standard sample 1a which is each provided with a roughened film whose surface area increase rate is known are prepared in plural number, the standard samples 1a are irradiated with continuous light rays of different wavelengths, and the reflectivity of the sample 1a is measured for light rays of each wavelength. Then, the relational expression between a surface area increase rate S of the standard sample 1a and a reflectivity R of the standard sample 1a for light rays of specific wavelength is obtained. Then, a measurement sample 1b, which is equipped with a roughened surface and whose surface area increase rate is unknown, is irradiated with a light ray of specific wavelength, and a reflectivity Ru of the measurement sample 1b for light rays of specific wavelength is measured. By substituting the measured reflectivity Ru of the measurement sample 1b for the reflectivity R in the relational expression between the surface area increase rate S and the reflectivity R for light rays of specific wavelength, the surface area increase rate Su of the roughened film provided in the measurement sample 1b is obtained.
申请公布号 JP2000077494(A) 申请公布日期 2000.03.14
申请号 JP19980242369 申请日期 1998.08.27
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 FUTASE TAKUYA
分类号 G01B11/30;G01N21/88;G01N21/93;G01N21/956;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01B11/30
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