发明名称 SEMICONDUCTOR PHOTODETECTOR, MANUFACTURE OF SEMICONDUCTOR PHOTODETECTOR, AND PHOTODETECTOR MODULE
摘要 PROBLEM TO BE SOLVED: To make feasible of enhancing the reliability upon the structure and operational characteristics of an element facilitating the manufacture at low cost also photoelectrically converting the beams on long wavelength side to be outputted without fail. SOLUTION: This photodetector 10 is composed of the first photoabsorption layers 13, the second conductive buffer layer 15, the second conductive second photoabsorption layer 17 and the second conductive window layer 19 laminated in this order on the first main surface 11a side of the first conductive substrate 11. In such an arrangement, the photoabsorption layer 13 contains the first conductive region 13x and the second conductive region 13y as well as the first conductive diffused region 21 in the depth reaching the boundary between the upperside of the window layer 19 and the second photoabsorption layer 17 on the partial region of the window layer 19, furthermore the first conductive main electrode 23 as well as the second conductive main electrodes 25 on the window layer 19 around this diffused region 21 while the energy gap wavelength of the second photoabsorption layer 17 is longer than that of the first photoabsorption layer 13 likewise the energy gap wavelength of the first photoabsorption layer 13 is longer than that of the substrate 11, the buffer layer 15 and the window layer 19.
申请公布号 JP2000077702(A) 申请公布日期 2000.03.14
申请号 JP19980245116 申请日期 1998.08.31
申请人 OKI ELECTRIC IND CO LTD 发明人 FURUKAWA RYOZO;KATO MASANOBU
分类号 H01L31/10;H01L31/00;H01L31/0216;H01L31/101;(IPC1-7):H01L31/10 主分类号 H01L31/10
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