| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device improved in such a manner that element characteristic can be improved by restraining the increase in a junction leakage current and junction capacitance. SOLUTION: In this semiconductor device, a first semiconductor layer 15 and a second semiconductor layer 15 are arranged on both sides of a gate electrode 11 on a semiconductor substrate 1, electrically isolated from the gate electrode 11. A source 17 and a drain 17 whose one ends intrude into the main surface of the semiconductor substrate 1 and are connected with the edge of a channel are formed on the surface layers of the first and second semiconductor layers 15, 15.
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