| 摘要 |
PROBLEM TO BE SOLVED: To obtain a heating apparatus which can selectively heat only part of a specific area of an object to be heated and can easily realize a plurality of processes necessary for heat treatment of different temperatures for the single object to be heated. SOLUTION: A plurality of (three in this case) uniform-illumination illumination infrared lamps 20 having paraboloidal reflecting mirrors 20a provided outside a quartz pipe 11 are provided. A semiconductor wafer 13 has an LSI of a DRAM/logic mixture type formed thereon including logic and DRAM part. High temperature heat treatment is required only for the DRAM part while unnecessary for the logic part. A mask 14 sized to cover the semiconductor wafer is arranged above a susceptor 12. Infrared light 20b is irradiated onto the entire wafer 13 from the infrared lamps 20. However, due to the provision of the mask 14, the infrared light 20b other than openings 14a of the mask are shielded. Accordingly, the infrared light is irradiated only on a specific part (DRAM part) of the wafer 13 to selectively heat the DRAM part.
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