| 摘要 |
PROBLEM TO BE SOLVED: To control with good accuracy the depth of an impurity diffusion in a field-effect transistor and a P-N junction semiconductor device. SOLUTION: A bonding layer 2 and a cap layer 3 are deposited on a semiconductor substrate 1, an insulating layer 4 for mask is formed on this cap layer 3 and after this, an aperture 7 is formed in this layer 4. After that, impurities are diffused in the layers 3 and 2 using the layer 4 as a mask, and after the parts of the layers 4 and 3 are removed to the layer 3, an electrode is formed on the layer 3. When the impurities are diffused in the layer 2, the diffusion takes place via the layer 3. Therefore, the depth of an impurity region, which is formed in the layer 2, is controlled accurately. As a result, when the semiconductor device is adopted for an HEMT, for example, irregularities in the Vths of the HEMT is decreased.
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