| 摘要 |
PROBLEM TO BE SOLVED: To enable a void-free insulating film to be formed so as to prevent bridges from being produced between gate electrodes by a method, wherein a first insulating film is evaporated on all the surface of a semiconductor substrate and then etched so as have a part of it left on the lower part of recess regions, and a second insulating film is evaporated so as to fill the recesses including the first insulating film. SOLUTION: A first interlayer insulating film 114 is evaporated on all the surface of a silicon nitride film 112, so as to fill up a recess region between adjacent gate structures 110 and then etched to be partially left on the lower part of the recess region. In succession, a second interlayer insulating film 116 is evaporated on all the surface of a board 100 so as to fill up the recess region besides the first interlayer insulating film 114. As a result, a void-free interlayer insulating film or a combination of the first and second interlayer insulating film, 114 and 116, is formed. Since a part of the first interlayer insulating film 114 is left in the recess region, the recess region is lessened in aspect ratio, so that no void will be produced while a second interlayer insulating film 116 is evaporated.
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