| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric-isolated power IC, without using a bonded SOI wafer. SOLUTION: A semiconductor device has a silicon substrate 101, an insulating substrate 28 bonded to the silicon substrate 101, a plurality of elements 101, 201, 301 formed on the silicon substrate 101 and isolated from each other by a dielectric, a first electrode 26 formed on a plane where the silicon substrate 101 is bonded to the insulating substrate 28 and connected to these elements, and a second electrode 21 formed on the insulating substrate 28 and connected to the first electrode 26.
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