| 摘要 |
PROBLEM TO BE SOLVED: To adjust the threshold voltage of a p-channel type field effect transistor and n-channel type field effect transistor with a relatively thin gate insulating film, without increasing the number of photomasks and the number of formation/removal processes for the photoresist pattern. SOLUTION: Using a photoresist film 3e, which is a mask for etching/ removing a gate insulating film 7a in a formation region of a relatively thin gate insulating film, an impurity for adjusting the threshold voltage of an n- channel type field effect transistor and p-channel type field effect transistor having a relatively thin gate insulating film, is introduced in batch in a semiconductor substrate 1 exposed there. |
