发明名称 Bipolar transistor having base contact layer in contact with lower surface of base layer
摘要 In a bipolar transistor including a semi-insulating substrate, a collector layer formed on the semi-insulating substrate and a base layer formed on the collector layer, a base contact layer is in contact; with a part of a lower surface of the base layer.
申请公布号 US6037616(A) 申请公布日期 2000.03.14
申请号 US19970989826 申请日期 1997.12.12
申请人 NEC CORPORATION 发明人 AMAMIYA, YASUSHI
分类号 H01L29/73;H01L21/331;H01L29/10;H01L29/205;H01L29/737;(IPC1-7):H01L31/032;H01L31/033;H01L31/072;H01L31/109 主分类号 H01L29/73
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