HEAT TREATMENT METHOD AND RETAINING DEVICE OF SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To simultaneously and uniformly heat-treat at least two semiconductor wafers by heat-treating at least two wafers that are installed while being piled up in parallel with a gap and are identical regarding geometric dimensions and thermal material characteristics using a plurality of upper and lower lamps. SOLUTION: A support frame 1 that is fixed to a treatment chamber and has an inward arm 2 accompanying a mount part 3 for achieving a parallel interval is provided. The surface of a wafer being directed toward a lamp is heated by receiving a radiation energy from an upper or lower lamp. The surface that is directed in each other wafer is heated by the reflection and release of the radiation energy of each other semiconductor wafer. In that case, two semiconductors are heat-treated while the single-crystal ultra-pure silicon wafers are installed in a retaining device in the treatment chamber while they are advantageously identical in terms of geometric dimensions and thermal material characteristics, are in parallel, and are overlapped with a gap.