| 摘要 |
<p>The invention relates to a method of manufacturing a discrete or integrated bipolar transistor comprising a base (1A), an emitter (2) and a collector (3). The base (1A) and a connecting region (1B) of the base (1A) are formed by providing a semiconductor body (10) with a doped semiconducting layer (1) which locally borders on a monocrystalline part (3) of the semiconductor body which forms the collector (3). Outside said base, the layer (1) borders on a non-monocrystalline part (4) of the semiconductor body (10) and forms a non-monocrystalline connecting region (1B) of the base (1A). By means of a mask (5), the doping concentration of the layer (1) outside the mask (5) is selectively increased, resulting in a highly conducting connection region (1B) and a very fast transistor. In the known method, an ion implantation is used for this purpose. In a method in accordance with the invention, this is achieved by bringing the semiconductor body (10) into contact with a gaseous substance (40) comprising a doping element, and heating the semiconductor body (10) in such a manner that the doping elements penetrate into the semiconducting layer (1). The supply of the gaseous substance (40), for example diborane, preferably takes place at a temperature between 800 and 950 °C for one to several minutes. Subsequently, a slightly longer diffusion step can be carried out, for example, at 850 °C.</p> |
