发明名称 Dünnschicht-Struktur mit leitfähiger Molybdän-Chrom Verdrahtung
摘要 <p>A conductive line (72-76; Fig.3) in a thin-film structure such as an AMLCD array (Fig.3) includes molybdenum and chromium so that it can be processed in a manner similar to chromium but has a greater conductivity than chromium due to the molybdenum. The conductive line (72-76; Fig.3) can be produced by physical vapor deposition (30) of a layer of a molybdenum-chromium (MoCr) alloy, which can then be masked (32) and etched (34) using photolithographic techniques in a manner similar to chromium. Proportions between 15 and 85 atomic percent of molybdenum can be processed more easily than pure molybdenum and are more conductive than pure chromium. Lines with between 40 and 60 atomic percent molybdenum can be used with a margin of error. To produce a tapered conductive line (Fig.9), sublayers of MoCr alloys with different etch rates can be produced and etched. <IMAGE></p>
申请公布号 DE69514858(D1) 申请公布日期 2000.03.09
申请号 DE1995614858 申请日期 1995.04.13
申请人 XEROX CORP. 发明人 HO, JACKSON H.;ALLEN, ROBERT;CHUANG, TZU-CHIN
分类号 G02F1/136;G02F1/1362;H01L21/3205;H01L23/52;H01L23/532;H01L29/786;(IPC1-7):H01L23/532 主分类号 G02F1/136
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