发明名称 POLYIMIDE PRECURSOR, LIGHT SENSITIVE RESIN COMPOSITION, PRODUCTION OF RELIEF PATTERN, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a polyimide precursor manifesting excellent photosensitive characteristics, providing a high resolution, excellent in remaining rate of a membrane, good in volatility at the time of imidation and characteristics of hardened membrane, and useful for a surface-protecting membrane or the like of a semiconductor by including a specific repeating unit. SOLUTION: This polyimide precursor contains a repeating unit of formula I [Ar1 is a tetravalent organic group having an aromatic ring; Ar2,, is a divalent organic group having an aromatic ring; X and X' are each carboxyl or a group of formula II, with the proviso that at least one is the group of formula II; R and R' are each H, methyl or the like; R" is H or methyl; (n) is 2-4]. The precursor is obtained by reacting a tetracarboxylic acid dianhydride (e.g. 4,4- oxydiphthalic acid dianhydride) with a diamine compound (e.g. 4,4'- diaminodiphenyl ether). Preferably, the polyimide precursor is obtained by introducing a side chain to a polyamic acid having 10,000-700,000 weight average molecular weight by using a compound of formula III, [e.g. (N,N- dimethylaminoethoxy)ethyl methacrylate].
申请公布号 JP2000072875(A) 申请公布日期 2000.03.07
申请号 JP19980245376 申请日期 1998.08.31
申请人 HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD 发明人 KO MASAHIKO;MIYASAKA MASAHIRO;GERALDIN LAMES RANGELADE
分类号 G03F7/004;C08F2/50;C08F290/14;C08G73/10;C08L79/08;C09D5/00;C09D179/08;G03F7/027;G03F7/029;G03F7/038;H01L21/027 主分类号 G03F7/004
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