| 发明名称 |
Process for reducing copper oxide during integrated circuit fabrication |
| 摘要 |
A method of integrated circuit fabrication creating copper interconnect structures wherein the formation of copper oxide is reduced or eliminated by etching away the copper oxide performing an H2 plasma treatment in a plasma enhanced chemical vapor deposition chamber.
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| 申请公布号 |
US6033584(A) |
申请公布日期 |
2000.03.07 |
| 申请号 |
US19970995499 |
申请日期 |
1997.12.22 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO, MINH VAN;MORALES, GUARIONEX;NOGAMI, TAKESHI |
| 分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/311 |
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