发明名称 Process of preparing high-density sintered ITO compact and sputtering target
摘要 A sintered ITO compact is provided which is capable of retarding nodule formation, or particle generation. The sintered ITO compact is composed of In, Sn, and O, and has avelage length of void size of not larger than 0.7 mu m. This sintered ITO compact is produced by sintering, substantially in an oxygen atmosphere, a green compact formed from a mixed powder of indium oxide power and tin oxide powder, the mixed powder containing the tin oxide powder at a content ranging from 5% to 15%, and the tin oxide powder having particles of a particle size of not more than 1 mu m constituting not less than 90% portion thereof; or produced by sintering, in an oxygen atmosphere, a green compact formed from a mixed powder of indium oxide powder and tin oxide powder, the mixed powder having a tap density of not less than 1.8 g/cm3, and the tin oxide powder having a maximum particle size of not larger than 1 mu m and a median diameter of not larger than 0.4 mu m.
申请公布号 US6033620(A) 申请公布日期 2000.03.07
申请号 US19960631992 申请日期 1996.04.15
申请人 TOSOH CORPORATION 发明人 UTSUMI, KENTARO;TAKAHARA, TOSHIYA;KONDO, AKIO;MATSUNAGA, OSAMU
分类号 G02F1/1343;C01G19/00;C04B35/00;C04B35/457;C23C14/08;C23C14/34;H01B13/00;(IPC1-7):C04B35/457 主分类号 G02F1/1343
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