发明名称 Semiconductor integrated circuit device having stacked wiring and insulating layers
摘要 A semiconductor device includes a semiconductor chip, and a multi-layered member connected to the semiconductor chip. The multi-layered member includes one or a plurality of wiring layers and one or a plurality of insulating layers alternately stacked. The one or the plurality of insulating layers have holes. The multi-layered member has electrode parts which include deformed portions of the above one or the plurality of wiring layers obtained by deforming the above one or the plurality of wiring layers via said holes.
申请公布号 US6034428(A) 申请公布日期 2000.03.07
申请号 US19960745203 申请日期 1996.11.08
申请人 FUJITSU LIMITED;KYUSHU FUJITSU ELECTRONICS LIMITED 发明人 KAWAHARA, TOSHIMI;ISHIGURO, HIROYUKI;OSAWA, MITSUNADA;TANIGUCHI, SHINICHIROU;OSUMI, MAYUMI;NAKASEKO, SHINYA;KATOH, YOSHITUGU;KASAI, JUNICHI
分类号 H01L21/60;H01L23/31;H01L23/498;H05K3/40;(IPC1-7):H01L23/053 主分类号 H01L21/60
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