| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon wafer for obtaining a wafer of good surface state with small thickness unevenness by rapidly slicing a silicon ingot having a large bore diameter by using an inner peripheral cutter grinding stone. SOLUTION: The method for manufacturing a silicon wafer comprises the steps of stretching an inner peripheral blade grinding stone having an inner peripheral cutter having an outer diameter of 1,100 to 1,400 mm, an inner diameter of 350 to 500 mm, a thickness of a base metal of 0.16 to 0.22 mm and made of a diamond abrasive layer 2 so as to extend its inner diameter to 3 to 5 mm, and slicing a silicon ingot having a diameter of about 300 mm.
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