| 摘要 |
PURPOSE: To improve the off current quality of the thin film transistor by reducing current leakage, the technology to have LDD (light doped drain) area or offset was suggested. But this technology has the problem of an increase in the number of masks and misalignments and the requirement of other equipment. Method to manufacture thin film transistor is provided which can solve misalignment problems without adding masks. CONSTITUTION: Form buffer layer (12), activation layer (13), gate insulation layer (14), and gate electrode (15a) sequentially and then form mask layer (16) by attaching one of semiconductor or electric conductor, or insulator on the side or on the upper face of the gate electrode (15a) by chemical method. Inject impurities into the activation layer (13) by using mask layer (16) and form a source/drain area (13a, 13b). Remove the mask layer (16) and use it as an offset area or as an LDD area with another ion injection. The mask layer (15a) is formed selectively on the side or on the upper face of the gate electrode (15a) by chemical method and no mask is added and self-alignment prevents misalignments.
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