| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase intensity of light reaching a light receiving element and to increase the change of the output of a light emitting element generated due to membrane film vibration by making the sum of the thickness of a light emitting element device substrate and the height of the light emitting element equal to the sum of the height of a light receiving element device substrate and the height of the light receiving element when the height of the light emitting element is different from that of the light receiving element. SOLUTION: The height of a general near infrared light emitting diode as a light emitting element 1 is 0.2 mm, and the height of a near infrared photo-diode and photo- transistor element as a light receiving element 2 is 0.3 mm. At the time of using a light emitting element device substrate 3 which is thicker than a light receiving element device substrate 4 by 0.1 mm, height from the light emitting element 1 to a resin sealing part outgoing part and height from the resin sealing part outgoing part to the light emitting element 2 are respectively 0.3 mm and 0.3 mm, and a vertical distance is reduced to 86%. The intensity of the light emitting diode outgoing light is made inversely proportional to the square of a propagation distance. When the propagation distance is reduced to 86%, the light emitting element reaching light intensity is increased by 36%, and sharp increase can be achieved.</p> |
