| 摘要 |
PROBLEM TO BE SOLVED: To transform theΛand V type nonlinear resistance characteristics into that of the integrated circuits of the same constitution in a standard CMOS process by using a core circuit where the source terminals of enhancement type N and P channel MOSFETs having the capacitive coupling multi-input gate terminals are connected to each other. SOLUTION: The source terminals of enhancement type N and P channel MOSFETs (MN and MP) are connected to each other with addition of drain terminals A and B. Then the input capacitance CN1, CN2 and CP1, CP2 and the input terminals N1, N2 and P1, P2 are added to the MN and MP gates respectively. In such a constitution, a core circuit is obtained. Furthermore, the potentials VGnB and VGpB, gate-source voltage VGSn and VGSp and drain-source voltage VDSn and VDSp are given to the MN and MP gate terminals respectively as shown by each prescribed expression. Thus, theΛand V type I-V characteristics are acquired in various ways by the external control voltage in the same circuit constitution, and the circuit constitution can be transformed into the integrated circuits in a standard CMOS process.
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