| 摘要 |
PROBLEM TO BE SOLVED: To avoid depositing a fluorocarbon film and depositing contaminants on an Si substrate, etc., to reduce the leakage current. SOLUTION: This method of manufacturing a bipolar transistor comprises the steps of forming a p-type SiGe film 12 and an n-type Si film 13 on an n-type Si substrate 11, selectively etching and removing at least the Si film 13 and SiGe film 12 by sputtering method to expose the Si substrate 11 and SiGe film 12 corresponding to electrode forming scheduled regions, and forming a collector electrode 16, base electrode 17 and emitter electrode 18 on the Si substrate 11, SiGe film 12 and Si film 13, respectively, an Ar gas nonreactive to Si is used, at etching of the Si film 13 and SiGe film 12.
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