SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To form an embedded wiring having a fine pattern on an interlayer insulation film which is difficult to be made fine patterning on a semiconductor substrate, without causing deterioration of the interlayer insulation film or increase in steps as well as to enhance the adhesion of the interlayer insulation film to a barrier metal film or a metal film for wiring. SOLUTION: A groove 306 for wiring having the bottom of a first insulation film 301 is formed on a third insulation film 304 comprising fluorine-doped polyimide on a first insulation film 301 made of a silicon nitride film on a silicon wafer 300. An embedded wiring 309 is formed on the groove 306 for wiring by filling a barrier metal film 307 comprising titanium nitride and a metal for wiring 308 made of copper. At the same time, a sidewall 302B which is made of a silicon oxide film and which has superior adhesion toward a third insulation film 304 and the barrier metal film 307, which is provided between the side surface of the groove 306 for wiring, and embedded wiring 309 is formed.