发明名称 OUTPUT CIRCUIT FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the output circuit for a semiconductor device that prevents a steady-state current from flowing from a power supply to a ground line after switching resulting in increasing power consumption regardless of a level outputted from an output terminal. SOLUTION: The output circuit has an output section of a structure where a high voltage N-channel MOS transister(TR) N1 and a high voltage N-channel MOS TR N2 are connected and this output section outputs an output voltage OUT1 via an output terminal 6. A P-channel thick gate TR P1 having a gate with a thickness to which a voltage from a power supply voltage VDD2 up to a ground level GND is applied is connected between a power supply 4 and a gate of the N-channel MOS TR N1. A level shift section 1 that converts a low level signal into a level from the power supply voltage VDD2 to the ground level GND connects to the gate of the P-channel thick gate TR P1.
申请公布号 JP2000068804(A) 申请公布日期 2000.03.03
申请号 JP19980237328 申请日期 1998.08.24
申请人 NEC CORP 发明人 YAMANAKA SHUICHI
分类号 H03K17/16;H03K17/687;H03K19/0175;(IPC1-7):H03K17/16 主分类号 H03K17/16
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