| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic resistance and thereby obtain high driving current by forming an LDD region, a pocket region, and a source/drain region by four- times of photolithography process. SOLUTION: In a photolithography process, a p-type impurity is doped into the entire surface of a substrate by ion implantation to form p-type impurity regions 126-129 in an n-type MOSFET formation region 122, a p-type MOSFET formation region 123, an n-type MOSFET formation 124, and a p-type MOSFET formation region 125, respectively. Thereafter, an n-type impurity 130 is doped by ion implantation to form n-type impurity regions 131-134 in the MOSFET formation regions 122-125, respectively. Moreover, with the n-type MOSFET formation regions 122, 124 masked with resist 180, B+ 181 is doped by ion implantation to form p-type source/drain regions 192, 193 in the p-type MOSFET formation regions 123, 125, respectively.
|
