| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photomask (reticle) capable of simultaneously lowering the deviation of the line width caused by the roughness an fineness of a pattern and the deviation of the line width caused by difference in the level of a substrate when a mask pattern is projected and exposed onto a resist and to provide the method for forming a resist pattern. SOLUTION: When a photomask (reticle) 5 is used for projecting and exposing a pattern onto a resist 4 which is coated on a substrate having different levels, the dimensions of a design of the photomask are corrected with different amounts of corrections according to the parts having different resist thicknesses which is formed in accordance with the different levels of the substrate of the resist 4. The method for forming a resist pattern is comprised of using such photomask.</p> |
