| 摘要 |
A method for fabricating a ferroelectric memory device comprising forming contact plugs 14a-e in a first insulating layer 12 upon a substrate 10 having transistors formed therein; forming a first conductive layer 16, a ferroelectric film 17 and a second conductive layer 18; etching layers 16, 17 and 18 to form capacitor patterns 20, 21, 22, 23 and first conductive layer patterns 16b, 16c, 16e, 16g; forming a second insulating layer 30, etching first contact holes to the first conductive layer patterns and then depositing a first conductive material to form a first level interconnection 32a-d; forming a third insulating layer 34, etching second contact holes to expose the first level interconnections and the capacitor patterns and depositing a second conductive material to form a second level interconnection 36a-d. Preferably the first level interconnection and the first conductive layer, and the second level interconnection and the second conductive layer, are made of the same material. |
