发明名称 |
RELIABILITY BARRIER INTEGRATION FOR CU METALLISATION |
摘要 |
<p>Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.</p> |
申请公布号 |
EP0981832(A1) |
申请公布日期 |
2000.03.01 |
申请号 |
EP19980926038 |
申请日期 |
1998.05.13 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHEN, FUSEN;CHEN, LIANG-YUH;MOSELY, RODERICK, CRAIG;EIZENBERG, MOSHE |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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