| 摘要 |
PROBLEM TO BE SOLVED: To obtain at a low temp. a film-shaped boron carbonitride having a desired compsn., excellent in adhesion and formed on a material to be deteriorated at a high temp. by simultaneously executing ion irradiation and vapor deposition and properly selecting a raw material for iron irradiation and a raw material for a vapor depositing material. SOLUTION: A base material 13 fitted to a base material holder 12 in a vacuum vessel 11 is irradiated with nitrogen-contg. ions only or ions 20 obtd. by mixing nitrogen-contg. ions and carbon- or boron-contg. ions from an ion source 14. Simultaneously, carbon or boron being the raw material 16 in an evaporating source 15 set at the lower part in the vacuum vessel 11 is irradiated with an electron beam 17. The evaporated vapor 18 is vapor-deposited on the base material 13. The vapor-deposited amt. is measured by a monitor 19. The energy of the mixed ions 20 is preferably adjusted to >=3 keV. Only by changing the feeding ratio of the raw materials, the compsn. of a boron carbonitride film can be controlled. By the energy of the ions, the improvement of the reactivity of the raw materials and the adhesion between the boron carbonitride film and the base material can be expected.
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