发明名称 |
Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation |
摘要 |
A method for fabricating a first memory cell and a second memory cell having floating gates electrically isolated from each other. A first polysilicon (poly I) layer is formed on an oxide coated substrate, portions of the poly I layer to serve as future floating gates for the first and second memory cells. An interpoly dielectric layer is formed over the poly I layer. At least a portion of the interpoly dielectric layer is etched to expose at least a portion of the poly I layer so as to pattern the floating gates on either side of the exposed portion of the poly I layer. The exposed portion of the poly I layer is transformed into an insulator via thermal oxidation such that the insulator electrically isolates a floating gate of the first memory cell from a floating gate of the second memory cell. A second polysilicon (poly II) layer is formed substantially free of abrupt changes in step height.
|
申请公布号 |
US6030868(A) |
申请公布日期 |
2000.02.29 |
申请号 |
US19980033916 |
申请日期 |
1998.03.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
EARLY, KATHLEEN R.;TEMPLETON, MICHAEL K.;TRIPSAS, NICHOLAS H.;CHAN, MARIA C.;RAMSBEY, MARK T. |
分类号 |
H01L21/8247;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|