摘要 |
Integrated circuits, including field emission devices, have a resistor element of amorphous SixC1-x wherein 0<x<1, and wherein the SixC1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.
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申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;SILICON VIDEO CORPORATION |
发明人 |
BRANDES, GEORGE R.;BEETZ, CHARLES P.;XU, XUEPING;RAMANI, SWAYAMBU V.;BESSER, RONALD S. |