发明名称 |
Semiconductor laser and method of fabricating same |
摘要 |
A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.
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申请公布号 |
US6031858(A) |
申请公布日期 |
2000.02.29 |
申请号 |
US19970925764 |
申请日期 |
1997.09.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HATAKOSHI, GENICHI;ONOMURA, MASAAKI;RENNIE, JOHN;ISHIKAWA, MASAYUKI;NUNOUE, SHINYA;SUZUKI, MARIKO |
分类号 |
H01S5/042;H01S5/22;H01S5/223;H01S5/323;H01S5/40;(IPC1-7):H01S5/32 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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