发明名称 |
Sputter etching chamber having a gas baffle with improved uniformity |
摘要 |
The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas baffle presents a smooth surface to the incoming sputtering gas so that it disperses uniformly throughout the sputtering chamber, thereby avoiding local fluctuations in pressure which, in turn, can lead to local differences in material removal rate as well as to particulate contamination of the surface that is being etched. The design of the baffle is described along with a method for attaching it to the inside of the sputtering shield.
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申请公布号 |
US6030508(A) |
申请公布日期 |
2000.02.29 |
申请号 |
US19980083252 |
申请日期 |
1998.05.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
YANG, CHIN-SHIEN;CHEN, CHUAN-HUAI;LIN, CHENG-KUN |
分类号 |
H01J37/32;H01J37/34;(IPC1-7):C23C14/34 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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