| 摘要 |
PURPOSE: A wafer is provided to exactly measure the degree of heavy metal impurities even in a manufacturing process of processing a wafer of a long diameter of 8 inches, 12 inches or longer. CONSTITUTION: The manufacturing method of a wafer for monitoring the amount of heavy metal impurities, which is thinner than the previous provided standard wafer thickness to a diameter of a wafer and has the reduced measuring errors, is composed of the steps of: heating the light element in an atmosphere of O¬2+He or H¬2+He at a temperature of 1150 to 1350°C; and heating the light element in an atmosphere of N¬2+O¬2 or O¬2 at a temperature of 900 to 1000°C. |
