发明名称 LOCATION ALIGN MARK OF A SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
摘要 PURPOSE: A location align mark of a semiconductor device is provided to easily and exactly perform a location detection of a layer formed on a side wall of a location align mark. CONSTITUTION: The location align mark of a semiconductor device comprises: a concave part of a rectangular plan shape having a pair of opposed side walls and formed on an insulation layer(5, 7) in order to detect a location of a wire layer(6, 8) formed on the insulation layer(5, 7). The concave part has a convex part(4A) as a film formation control region(4A) for forming side walls(60a, 60b, 61a, 61b, 80a, 80b) to a plane opposing the side walls(4a, 4b, 4c, 4d, 41a, 41b, 41c, 41d) of the wire layer(6, 8) which are formed inside the concave part at forming a layer on the wire layer(6, 8), wherein the side walls(60a, 60b, 61a, 61b, 80a, 80b) are in parallel with the side walls(4a, 4b, 4c, 4d, 41a, 41b, 41c, 41d) of the wire layer(6, 8).
申请公布号 KR20000011258(A) 申请公布日期 2000.02.25
申请号 KR19990016193 申请日期 1999.05.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 SEKIGUCHI NOBORU;HAGI KIMIO;KIMOTO MITHO
分类号 H01L21/027;H01L21/301;H01L23/544;(IPC1-7):G03F9/00 主分类号 H01L21/027
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