| 摘要 |
PROBLEM TO BE SOLVED: To improve the realiability of a semiconductor device by forming first and second metallic layers on an electrode formed on a semiconductor substrate in sequence through an electroless plating method, so as to prevent the deterioration of joint between a lump electrode and a pad electrode thereunder. SOLUTION: After forming a pad electrode 42 by patterning, an uneven flaw 46 which is formed on the surface of the pad electrode by the sharp tip of a probe during confirmation of property is covered entirely by forming an Ni film 48 as a first barrier metal layer at the same depth as or more than that of the flaw 46 by an electroless plating, forming a flat surface on the Ni film 48 as a barrier metal. Next, Ti and Ni films are formed as a second barrier metal layer 50 on the first barrier metal layer 48 and an insulation film 44. Thus, an Al comprising a lower pad electrode 42 and Pb and Sn comprising a bump electrode 52 are diffused mutually and bidirectionally, and a part of Al hits the bump electrode 52, thereby preventing the deterioration of contact property.
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