发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device together with a method for manufacturing it, comprising a means which prevents illegal actions such as irradiation of infrared light from the rear surface side of a substrate constituting a semiconductor device, for decoding an integrated circuit pattern or stored information constituting the semiconductor device or altering of the stored information, etc., even with a semiconductor device comprising a substrate cut to chip. SOLUTION: Related to a semiconductor device where an integrated circuit is provided on the surface of a substrate 4A, an irregular reflection part (irradiation trace 4D) comprising depressions and projections which allows incident light to be irregularly reflected is provided with an aggregate which are formed, in plural numbers, on a rear surface 4C of the substrate 4A and fused objects which are formed when melting particles (tungsten particle 12) melt on the rear surface 4C of the substrate 4A and stick to the depressions and projections at the irregular reflection part. Thus, decoding from a rear surface or alteration, etc., is prevented.
申请公布号 JP2000058748(A) 申请公布日期 2000.02.25
申请号 JP19980218920 申请日期 1998.08.03
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 OFUJI SHINICHI;HENMI MANABU;UNNO HIDEYUKI;OGAWA SHIGEO;MAEDA MASAHIKO
分类号 H01L27/04;H01L21/58;H01L21/822;(IPC1-7):H01L27/04 主分类号 H01L27/04
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