| 摘要 |
PROBLEM TO BE SOLVED: To improve the distribution of a current in the light emitting part of a semiconductor light emitting diode, and to enhance the light fetching efficiency and the luminance of the semiconductor light emitting diode. SOLUTION: In a semiconductor light emitting diode, a double heterostructure in which a p-InGaAlP active layer 13 is sandwiched between a p-type InGaAlP clad layer 12 and a p-type InGaAlP clad layer 14 is formed on an n-GaAs substrate 11, a p-side electrode 17 is formed on a part on the double heterostructure, an n-side electrode 18 is formed on the face on the opposite side of the double heterostructure of the substrate 11, and light is fetched from a face other than the electrode 17 formed on a part on the light emitting face on the opposite side of the substrate 11, In the semiconductor light emitting diode, a p-GaAlAs current diffusion layer 15 is inserted between the first electrode 17 and the p-type clad layer 14 in the double heterostructure. A sufficient current can be supplied to the active layer 13 other than a part directly under the p-side electrode 17 from the current diffusion layer 15. |
