| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor epitaxial wafer for manufacturing high voltage power FET and power HEMT. SOLUTION: Oxygen is added to an i-AlGaAs layer where a gate electrode 6 is formed. Thus, oxygen added to the i-AlGaAs layer 50 (or oxygen which originally exists) forms a deep level and acquires a pair of an electron and a positive hole. Thus, a carrier (electron or hole) generated by an electric field applied when a transistor is operated can be acquired and therefore leak current flowing between gate/drain electrodes can be reduced. Consequently, BVGD can be improved and a compound semiconductor epitaxial wafer for manufacturing high voltage power FET and power HEMT can be realized.
|
