PRODUCTION METHOD OF PRODUCT FOR CONTAINING OXIDE LAYER ON SEMICONDUCTOR MAIN BODY OF GALLIUM ARSENIC BASE

摘要

PURPOSE: A production method for containing oxide layer is provided to improve the characteristic of a device, to reduce the recombination in the outer base area due to the existence of improved oxide passivation. CONSTITUTION: The production method of GaAs base integrated circuit has the steps of: injecting a dopant ion on a GaAs substrate; heating the substrate to the effective temperature for activating the dopant ion injected; forming an oxide layer on a gate area as nearly exposing the gate area to the pollution; forming a metal contact on the oxide layer; respectively forming the metal contacts on a source area and on a drain area after or before forming the oxide layer; performing so the oxide as to have the whole composition GaxAyOz.