| 摘要 |
PURPOSE: An SOI wafer production method and an SOI wafer produced in this way is produced to improve the uniformity of the thickness of SOI layer by minimizing the impact of the thickness deviation of the oxide film formed on the bond wafer. CONSTITUTION: The SOI wafer is produced in the process of: step 1, to prepare a bond wafer(2) and a base wafer(1) a supporting substrate and forming at least an oxide film on the bond wafer, and injecting hydrogen ion or a rare gas ion through the oxide film so that a fine bubble layer may be formed in the bond wafer part; step 2, to have the ion injected part and the surface of the base wafer stick together tight, and to thermo treat the bond wafer. Therefore a control is made so that the thickness deviation of the oxide film formed on the bond wafer is smaller than the depth deviation of an ion injection and the uniformity of the thickness of the SOI layer is improved.
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