发明名称 FORMATION OF RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To easily form various undercut forms in accordance with requirement in a production process of a device by forming a resist film whose photosensitive depth is controlled in accordance with an exposure amt. and multiply exposing the resist film in the different exposure amt. from each other through plural masks whose aperture form is different from each other. SOLUTION: A resist film 21 is formed on a substrate 20 by coating. Then, the resist film 21 is exposed through a 1st mask 22 having the aperture pattern of a columnar part of an undercut form. Then, the resist film 21 is exposed through a 2nd mask 24 having the aperture pattern of a shade part of an undercut form. The shade part is exposed in the smaller amount of exposure than the columnar part so that a photosensitive area 25 may be in some depth from the surface of the resist film 21. As a result, an undercut type resist pattern capable of coping with an accurate optional lift-off process from a thin film to a thick film can be formed.
申请公布号 JP2000056469(A) 申请公布日期 2000.02.25
申请号 JP19980233470 申请日期 1998.08.06
申请人 TDK CORP 发明人 ASANUMA YUJI
分类号 G03F7/26;G03F7/20;H01L21/027 主分类号 G03F7/26
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