| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device provided with a semiconductor circuit composed of semiconductor elements which enhances TFT characteristics and has uniform characteristics, by a method wherein an interface between a region constituting an active layer, in particular a channel formation region, and a gate insulated film is formed superiorly, and its manufacture. SOLUTION: A catalytic element promoting a crystallization is annexed on a substrate 100 or an underlayer film 10, and an early semiconductor film is continuously formed on a first gate insulated film 102a, and next, after the early semiconductor film is crystallized by irradiation of infrared beams or ultraviolet beams (laser beams) via the first gate insulated film 102a, it is patterned to obtain an active layer and the first gate insulated film 102a having a desirable shape. Then, a second gate insulated film 102c is formed. |
