PLUGGED CROWN MEMORY CELL

摘要

PURPOSE: A plugged crown memory cell is provided to improve the etching aspect ratio and the defect density and to be strong and reliable by obtaining the high processing rate. CONSTITUTION: The manufacturing method of a plugged crown memory cell which includes the memory node plug and the successively formed polysilicon cylinder or the similar three-dimensional structure includes the steps of: forming a memory node contact, the memory cell plug; forming a sidewall of the memory cell; eliminating the core phosphorus silicate glass(PSG) and etching back the crown poly to form the insulated and electrically separated memory cell.